Abstract
Atomic layer epitaxy (ALE) of AlAs and AlGaAs with metalorganic vapor-phase epitaxy (MOVPE) under Ar-ion laser irradiation has been successfully realized in a triethylaluminum (TEA)/AsH 3 system for the first time. Comparison with the growth characteristics of MOVPE with alternative feeding modes of TMA/AsH 3 and TEA/AsH 3 is discussed. Application to laser-ALE of AlGaAs using a triethylgallium (TEG)/TEA/AsH 3 system is also discussed.
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