Atomic layer epitaxy of AlAs and (AlAs) n(GaAs) s

Abstract

An overview is given of the recent achievements of self-limiting growth for AlAs by metal-organic vapor phase epitaxy using dimethylaluminumhydride and arsine as source materials, and its application in (AlAs) n (GaAs) n short-period superlattices. There is a discussion of the possible Al configurations for two monolayers of self-limiting growth, the problems of carbon incorporation in the layers and the instability of dimethylaluminumhydride.