Abstract
Optical, crystallographic and transport properties of nominally undoped n-type ZnSxSe1−x /Si grown by atomic layer epitaxy have been studied. The lattice of a ZnSxSe1−x layer with a sulfur content estimated to be about 93% is found to have the best match to the Si substrate, as indicated by XRD, PL and electrical measurements. A narrow X-ray diffraction rocking curve line-width with a minimal FWHM of about 0.16° was observed. PL spectra, obtained at 7 and 300K, exhibited a strong near band-edge emission and weak deep-level emissions in the longer wavelength region for the ZnS0.93Se0.07 epitaxial layer. Schottky diodes were fabricated from the undoped ZnSxSe1–x layer and the electrical properties were measured at room temperature. From the current–voltage (I–V) characteristics, a high reverse breakdown voltage (>40V) and an extremely low cut-in voltage of 0.68V were obtained with ZnS0.93Se0.07. In addition, a Hall mobility of 347cm2/Vs was determined by the Van der Pauw method. These results indicate a good lattice-match of ZnS0.93Se0.07 /Si as a result of low numbers of interface and epitaxial layer defects.
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