Abstract
We report a two-step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by metalorganic vapor phase epitaxy technique. Photoluminescence and deep-level transient spectroscopy techniques are used to show that the quality of the grown material is comparable to that grown by a much complicated procedure involving strained layer superlattice buffers introduced between the active GaAs layer and the Si substrate.
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