Abstract
GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.
Highlights
The heteroepitaxy growth of GaAs on Si and porous Si substrates has received great interest due to its potential for the monolithic integration of GaAs, Si and hybrid devices that combines the advantage of each material
GaAs films has been grown on Si/porous silicon (PSi)/Si substrate by chemical beam epitaxy in anticipation that the total defect density of the films would be reduced by low growth temperature as compared to metalorganic chemical vapour deposition[6]
We report the growth of GaAs epilayers on PSi using two-step growth procedure
Summary
The heteroepitaxy growth of GaAs on Si and porous Si substrates has received great interest due to its potential for the monolithic integration of GaAs, Si and hybrid devices that combines the advantage of each material. The major problems are the large density of misfit dislocations and the threading defects resulting from the lattice mismatch (4, 2 %) and from the strong difference of the thermal expansion coefficient (240%) between GaAs and Si. The most important challenge is to obtain GaAs layers on Si with quality comparable to that on GaAs substrate. GaAs films has been grown on Si/PSi/Si substrate by chemical beam epitaxy in anticipation that the total defect density of the films would be reduced by low growth temperature as compared to metalorganic chemical vapour deposition[6]. The initial low-temperature growth of a GaAs thin nucleation layer is done by ALE on PSi to improve the morphology and reduce the dislocation density in GaAs layer. In order to analyse the quality of the GaAs layers, we have used grazing DRX, AFM image and photoluminescence (PL) techniques
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