Abstract
We demonstrate that phosphorous atomic layer doping in ultra-high vacuum is a viable method to obtain n-type doping of strained germanium-on-insulator thin films. By engineering single and multiple, closely-spaced P δ-layers, we obtain high active electron concentrations (∼1 × 1020 cm−3) and low electrical resistivity (∼120 Ω/square) whilst keeping control over doping profile, structural integrity, and tensile strain levels (e = 0.35%). Investigation of magnetotransport over a large temperature range (1.7-290 K) allows observation of two-dimensional electrons' weak localization up to 30 K.
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