Abstract
AbstractWe developed an ultra high vacuum (UHV) compatible atomic layer deposition (ALD) reactor for studying the growth of metal oxides. The compatibility of the ALD reactor with the UHV system allows the use of surface sensitive techniques for characterizing the substrate/thin film complex after each ALD cycle. For investigation of the growth of metal oxides we used synchrotron radiation X‐ray photoelectron spectroscopy, UHV atomic force microscopy and a combined system consisting of electron energy loss spectroscopy and ultraviolet photoelectron spectroscopy. The samples were analyzed after each ALD cycle, composed of the subsequent exposure of the surface to metal oxides precursors and H2O (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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