Abstract
AbstractTo improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub‐nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time‐resolved microwave conductivity measurements. High carrier mobilities of 4 cm2 (V s)−1 and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof‐of‐concept photovoltaic devices of InP QD films are demonstrated with an ALD‐grown ZnO electron extraction layer.
Highlights
To improve the stability and carrier mobility of quantum dot (QD) optoelecto their high surface-to-volume ratio many tronic devices, encapsulation or pore infilling processes are advantageous
Different thicknesses of crystalline ZnO films deposited on InP QD films are prevents extraction of one or both charge studied with spectrophotometry and time-resolved microwave conductivity carriers.[12,13,14,15]
The X-Ray diffraction (XRD) pattern shown in Figure 2c shows the expected pattern for wurtzite ZnO, while the broad diffraction lines are indicative of polycrystalline ZnO films
Summary
This shows that the increase in yieldmobility product for ALD coated InP QD films does not arise from QD sintering and can be attributed to the presence of ZnO in the films. Rigorous optimization is needed to achieve higher efficiencies, these concept devices show great potential for the integration of a functional ALD-grown metaloxide layer to provide charge extraction in solar cell devices
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