Abstract
ZrO2 films were grown by atomic layer deposition using ZrCl4 and O3 as precursors. The films were grown on silicon substrates in the temperature range of 220–500°C. The ALD rate was monotonously decreasing from 0.085 to 0.060nm/cycle in this temperature range towards the highest temperatures studied. The content of chlorine in the films did not exceed 0.2at.% as measured by elastic recoil detection analysis. The content of hydrogen was 0.30 and 0.14at.% in the films grown at 300 and 400°C, respectively. Structural studies revealed the films consisting of mixtures of stable monoclinic and metastable tetragonal/cubic polymorphs of ZrO2, and dominantly metastable phases of ZrO2 below and above 300°C, respectively. Permittivity of dielectric layers in Al/Ti/ZrO2/(TiN/)Si capacitors with 15–40nm thick ZrO2 ranged between 12 and 25 at 100kHz and the dielectric breakdown fields were in the range of 1.5–3.0MV/cm.
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