Atomic Layer Deposition of Y2O3 Thin Films from Yttrium Tris(N,N‘-diisopropylacetamidinate) and Water

Abstract

Y2O3 thin film was deposited by atomic layer deposition (ALD) with a new precursor yttrium tris(N,N‘-diisopropylacetamidinate), Y(iPr2amd)3, and water. The precursor was thermally stable and volatile and had high reactivity with water. The growth rate of Y2O3 films was 0.8 A/cycle over a wide temperature range (150−280 °C). The films were very pure (C, N 1.5) and −OH bonds in air-exposed films. A relatively high permittivity (∼12), a low leakage current density (<10-7 cm2 at 2 MV/cm) and high electrical breakdown field (∼5 MV/cm) were measured for capacitors prepared from Al2O3 (10 A)/Y2O3/n-Si structures. Uncapped Y2O3 films showed flat...