Abstract
Atomic layer deposition (ALD) of vanadium oxide (VOx) thin films, using tetrakis(dimethylamino)vanadium as the vanadium precursor, is comprehensively reported in this work. The vanadium precursor is highly volatile and can be used at room temperature for deposition. Either H2O or O3 can be used as the coreactant for depositing VOx at 50–200 °C. However, partial precursor decomposition is suggested for the deposition temperature higher than 160 °C. The as-deposited VOx films are pure, smooth, and amorphous, and can be crystallized into monoclinic VO2 phase by postdeposition annealing under N2 ambient. The minimum annealing temperature for film to crystallize is found, by in situ high-temperature X-ray diffraction experiments, at around 550–600 °C. In situ quartz crystal microbalance experiments are performed to further analyze the surface reaction mechanism involved in this ALD process.
Highlights
Vanadium oxide (VOx) has been extensively studied for many decades, due to its polymorphism and wide applications in a variety of fields.[1]
The TG weight loss started at a fairly low temperature under open-cup condition (1% weight loss at 70 °C) and completed at ;160 °C, with only ;2.5% in residual mass at the end of temperature ramping. This suggested that V(dma)[4] is a highly volatile compound with sufficient thermal stability to serve as a suitable precursor for Atomic layer deposition (ALD)
We performed a comprehensive study of ALD for VOx thin films using tetrakis(dimethylamino) vanadium [i.e., V(dma)4] as the vanadium precursor
Summary
Vanadium oxide (VOx) has been extensively studied for many decades, due to its polymorphism and wide applications in a variety of fields.[1]. An aminobased precursor of tetrakis(ethylmethylamino)vanadium [V(NEtMe)4] was described with water or ozone for depositing VOx thin films.[28,29,30] In this case, since metalnitrogen bonds are generally weaker than metal-oxygen bonds in transition metal organic compounds, V(NEtMe)[4] should be more reactive toward forming oxides in ALD. In situ quartz crystal microbalance (QCM) measurements were performed to analyze the surface reaction mechanism involved in this ALD process With these detailed characterizations, we hope to provide a comprehensive view of VOx ALD process from this V(dma)[4] precursor
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