Atomic Layer Deposition of Titanium Nitride Thin Films Using tert-Butylamine and Allylamine as Reductive Nitrogen Sources

Abstract

Titanium nitride films were deposited by the atomic layer deposition within a temperature range of 400 to 500°C from titanium tetrachloride and titanium tetraiodide using tent-butylamine or allylamine as a reductive nitrogen source with and without ammonia. The films were characterized with time-of-flight elastic recoil detection analysis, X-ray diffraction, and standard four-point probe methods. The films deposited from tert-butylamine exhibited low impurity contents and resistivity, but at lower temperatures the addition of NH 3 was necessary in order to achieve a reasonable deposition rate. When allylamine was used as the nitrogen source, the addition of NH 3 was not so essential and good quality films were deposited also without NH 3 . However, more carbon and hydrogen impurities were incorporated, resulting most likely from a decomposition of allylamine.