Atomic layer deposition of Ti and its deposition method

Abstract

Atomic layer deposition (ALD) is a very popular thin-film technique, and it is considered to be a method with great potential because it can produce conformal thin film with control of the thickness of layers and composition of the films at the nano-scaled level. In fact, there are other two types deposition techniques: Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD), which are also commonly used in surface treatment. However, the treatment conditions are different as CVD requires up to 1000°C while PVD requires lower than 500 °C. However, because of the self-controllability in ALD, this technique is widely applied in the fields including semiconductors, nanotechnology, and catalysts. In our current knowledge, substantial numbers of element could be used for ALD to form substrate layers. Some notable elements are carbide, Nitride, oxide, metal and so on. Among all kinds of possible deposited materials, titanium contained precursor are special and they receive tremendous attention because they could strengthen the base materials or protect the base materials from oxidization so that they improve the mechanical or chemical properties of pristine materials. Specifically, it could improve the properties of base materials such as reducing the work function, which is discussed in the passage. The purpose of this review is to provide an overview of current technology of deposition titanium contained chemicals and point out possible research topics in the future.