Atomic Layer Deposition of the Quaternary Chalcogenide Cu2ZnSnS4

Abstract

Atomic layer deposition (ALD) is a layer-by-layer synthesis method capable of depositing conformal thin films with thickness and compositional control on subnanometer length scales. While many materials have been synthesized by ALD, the technologically important metal sulfides are underexplored, and homogeneous quaternary metal sulfides are absent from the literature. We report an ALD process to synthesize Cu2ZnSnS4 (CZTS), a potentially low cost semiconductor being explored for photovoltaic applications. Two strategies are reported: one in which a trilayer stack of binary metal sulfides (i.e., Cu2S, SnS2 and ZnS) is deposited and mixed by thermal annealing, as well as a supercycle strategy that is similar to the conventional ALD procedure for forming nanolaminates. Both routes rely on the facile solid state diffusion of chalcogenides for mixing. For this ALD route to the CZTS system, the challenges are nucleation, ion-exchange between the film and the volatile chemical precursors, and phase-stability of binary SnS2. The thin films were made with no sulfurization step. The X-ray diffraction and Raman spectra were consistent with the formation of CZTS. X-ray fluorescence measurements revealed that the films contained the expected amount of sulfur based on the target oxidation states. Photoelectrochemical measurements under simulated AM1.5 illumination using Eu3+ as an electron acceptor demonstrated that the films were photoactive and had an average internal quantum efficiency (IQE) of 12%.