Abstract
Strontium tantalate thin films were grown with atomic layer deposition at 200-350°C using bimetallic donor-functionalized alkoxides and water as precursors. was found to be a suitable atomic layer deposition precursor for depositing films with compositions very close to the 1:2 metal ratio found in the precursor. Film compositions and impurity levels were studied with Rutherford backscattering spectrometry and time-of-flight elastic recoil detection analysis. The as-deposited films were amorphous, but after annealing in air at 800°C orthorhombic was observed. Dielectric permittivities were 16 and 50 for as-deposited films and for films annealed in air at 800°C, respectively. © 2004 The Electrochemical Society. All rights reserved.
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