Abstract
Niobium nitride NbN and niobium silicon nitride Nb(Si)N were deposited by Atomic Layer Deposition (ALD) from niobium pentachloride NbCl5, silicon tetrachloride SiCl4, and ammonia NH3. It was shown that low resistivity NbN can be more readily processed by ALD than low resistivity TaN using just NH3 as reducing agent. Silicon could be uniformly added into the NbN structure, and increase in silicon content increased the resistivity of the films due to silicon incorporation as silicon nitride. A successful scale-up onto 200 mm wafer was performed for both processes.
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