Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors

Abstract

This article describes a new atomic layer deposition (ALD) method for preparing indium tin oxide (ITO) thin films using nonhalogenated precursors. The indium oxide (In2O3) was deposited using alternating exposures to cyclopentadienyl indium (InCp) and ozone, and the tin oxide (SnO2) used alternating exposures to tetrakis(dimethylamino) tin (TDMASn) and hydrogen peroxide. By adjusting the relative number of In2O3 and SnO2 ALD cycles, we deposited ITO films with well-controlled SnO2 content. The ITO films were examined using four-point probe and Hall probe measurements, spectrophotometry, ellipsometry, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, and X-ray diffraction. The lowest resistivity (3 × 10-4 Ωcm) and highest optical transparency (92%) were obtained for films containing 5% SnO2. The ITO films were slightly thinner and contained more SnO2 than expected on the basis of rule-of-mixtures predictions. In situ measurements revealed that these discrepancies result from an inh...