Abstract
HfO2 thin films were formed by atomic layer deposition (ALD) using a tetrakis(diethylamino)hafnium (TDEAH) + H2O gas system at 300 °C on various Si surfaces: bare Si, chemical oxide, and thermal oxide. The growth showed no incubation period under all surface conditions. The deposition rate was estimated to be 0.10 nm/cycle for deposition on the bare Si and chemical oxide, and 0.06 nm/cycle on the thermal oxide. The deposited films were confirmed to be stoichiometric HfO2 by Rutherford backscattering spectroscopy, and Al/ALD-HfO2/SiOx/Si capacitors have comparable electrical properties with respect to recently reported data.
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