Abstract
Hafnium silicate films were grown by atomic layer deposition using the liquid precursors tetrakis(diethylamido)hafnium (TDEAH) and tris(2-methyl-2-butoxy)silanol, (TMBS). Using in situ ellipsometry, ex situ high resolution transmission electron microscopy (HRTEM), medium energy ion scattering (MEIS), and X-ray photoelectron spectroscopy (XPS), the details of the film thickness and composition were examined as functions of both the substrate temperature and silanol pulse time. Both HRTEM and MEIS measurements revealed that the films comprised two layers, with the surface layer containing more Hf than the layer in contact with the substrate. A self-limiting growth with a rate was observed only after several initial cycles, a behavior that is ascribed to the chemistry of the initial Si substrate surface. Hf 4f XPS confirmed that the films were stoichiometric throughout despite the nonconstant Hf concentration with depth. A reaction mechanism between TDEAH and TMBS is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
