Abstract
Atomic layer deposition of Hf–Si–O and using , , and was studied. The growth per cycle and composition of Hf–Si–O films were analyzed as a function of the growth temperature, the pulse sequence, and the precursor doses. The growth of Hf–Si–O from appeared to be determined not only by the –OH density but also by the –OH bonding mode. The chemistry results in carbon-free films with low chlorine impurity content. The Hf–Si–O films of Hf-rich composition are meeting the leakage-current requirements for technology node and below.
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