Atomic layer deposition of diethylzinc/zinc oxide on InAs surface quantum dots: Self-clean-up and passivation processes

Abstract

Passivation capping of molecular beam epitaxy (MBE)-grown InAs surface quantum dots (SQDs) is achieved by ex situ atomic layer deposition (ALD)-grown ZnO using diethylzinc (DEZ) as the zinc precursor, the main passivation agent, and oxygen plasma. Photoluminescence (PL) intensity is enhanced by 2-fold as the DEZ/ZnO passivation cap thickness reached 30 nm. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) show that contrary to conventional wet chemistry passivation or MBE capping, in which InAs SQDs can be damaged or be shrunken by intermixing of In and Ga, DEZ/ZnO passivation capping almost preserves the shape of the underlying SQDs. The cross-sectional analysis with transmission electron microscopy (TEM) reveals the formation of the ZnO grains on top of the sample accompanied by slight SQD height and width reduction, which are presumably related to the removal of the InAs native oxides. The DEZ “self-clean-up” passivation mechanism, where zinc precursor is responsible for reduction of the surface non-radiative recombination sites, is studied by X-ray photoelectron spectroscopy (XPS). The factors that control the DEZ “self-clean-up” efficiency such as the chain of chemical reactions, steric hindrance, decomposition activation energy, Gibbs reactivity, or Lewis acidity, are evaluated. The results are discussed in comparison with trimethylaluminum (TMA), a precursor used for Al2O3 deposition. We find that the “self-cleaning” by DEZ and TMA occurs through processes of different chemical nature.