Abstract
Deposition of thin and conformal copper films has been examined using atomic layer deposition as possible seed layers for subsequent electrodeposition. For this investigation, the copper films were deposited on glass plates as well as on , , and films on silicon wafers. Typical resistivities of these films ranged from for thick copper films to for thick films. The adhesion of the copper films deposited on and at was excellent. These films were highly conformal over high aspect ratio trenches. ©2000 The Electrochemical Society
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