Abstract

Taking the importance of uniform size catalysts and the unfavorable effects of residual metal catalysts into consideration, herein, we develop a facile way which utilizes the typical and facile semiconducting technique namely atomic layer deposition (ALD) to prepare non-metallic Al2O3 catalysts for narrow diameter single-walled carbon nanotube (SWNT) arrays growth. As a result, we obtained SWNT arrays with narrow-diameter distribution of 1.26 ± 0.033 nm on the a-plane sapphire substrates. Moreover, the relationship between catalysts and SWNTs were explored. These optimized conditions pave an avenue for narrow diameter even chirality distribution in SWNTs growth, which promotes the development of structure-controlled and relative applications of SWNTs.

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