Abstract
Al(2)O(3) and TiO(2) thin films have been deposited on Si wafers, quartz, BK7 glass, and polycarbonate substrates by atomic layer deposition (ALD). The refractive indices and growth rates of the materials have been determined by spectroscopic ellipsometry and transmission electron microscopy. The influence of substrate temperature and precursor on the refractive indices has been investigated. The refractive index of TiO(2) significantly increases with temperature, whereas the Al(2)O(3) films are temperature insensitive. The films deposited using H(2)O(2) as oxygen source show a slightly higher refractive index than the films prepared with H(2)O. Multilayer narrow-bandpass filters and broadband antireflective coatings have been designed and produced by ALD.
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