Abstract
Y2O3 and YSZ thin films were thermally deposited by atomic layer deposition in a commercial ALD cross flow reactor. Using a Low Vapor Pressure Delivery system, tris(ethylcyclopentadienyl) yttrium - Y(EtCp)3 - heated at 120˚C - was used as a precursor. Tetrakis(dimethylamido)zirconium - TDMAZr and water were used for ZrO2. In-situ quartz crystal microbalance and spectroscopic ellipsometry were implemented in order to rapidly screen the ALD process space from 150 to 300˚C as a function of Y(EtCp)3 and H2O doses and purge conditions. The optimized process led to excellent wafer-scale performances with good thickness uniformity and excellent process reproducibility. The yttria film properties were optimal around 225-250˚C with a high refractive index (1.93), low carbon concentration (<0.1%) and Y0.4O0.6 stoichiometry. The growth of ternary YSZ oxides was monitored by QCM and showed that the composition of yttria in zirconia was readily controlled by adjusting the Y2O3 to ZrO2 cycle ratio.
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