Abstract
films were grown by atomic layer deposition from and on atomic layer deposited thick platinum, iridium, and ruthenium films in the temperature range . The phase formed in the thick films was monoclinic dominating over amorphous material without noticeable contribution from metastable crystallographic polymorphs. The metal-dielectric-metal capacitor structures formed after evaporating Al gate electrodes demonstrated effective permittivity values in the range 11-16 and breakdown fields reaching . Iridium electrode films showed the highest stability in terms of reliability and reproducibility of dielectric characteristics.
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