Abstract
Bi2Te3 thin films were deposited by atomic layer deposition (ALD) from BiCl3 and (Et3Si)2Te at 160-300 °C. The process was studied in detail, and growth properties typical of ALD were verified. Films were stoichiometric with low impurity content. The film thickness was easily controlled with the number of deposition cycles. Properties of the ALD Bi2Te3 thin films were found to be comparable to those reported in literature for Bi2Te3 films made by other methods. Films crystallized to a rhombohedral phase, and there was a preferred orientation to the growth. Electrical and thermoelectric properties were also determined to be comparable to literature values.
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