Abstract
In this work, the high κ ZrxAl1−xOy films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of ZrxAl1−xOy films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of ZrxAl1-xOy gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with ZrxAl1−xOy film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the ZTO/ZrxAl1−xOy interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.
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