Abstract
Copper oxide (CuOx) films were grown at a relatively low temperature (100°C) by atomic layer deposition (ALD). Hexafluoroacetyl-acetonateCu(I)(3,3-Dimethyl-1-butene) ((hfac)Cu-(I)(DMB)) and ozone (O3) were used as the copper precursor and oxidant, respectively. It is shown that stable phases of CuOx are obtained through rapid thermal annealing (RTA) in air. After annealing at various temperatures (200–500°C), different p-type band structures and electron binding information are obtained. X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) studies indicate that the major copper oxidation state changes from 1+ to 2+ during thermal treatment. Thin film transistors (TFTs) incorporating the ALD-grown CuOx semiconductors are evaluated, and an unusually high p-type device performance is observed, with a field effect mobility of 5.6cm2/Vs after annealing at 300°C.
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