Abstract
The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.
Highlights
While atomic layer deposited (ALD) of metal oxides has been widely used for graphene field effect transistors (FETs), here we demonstrate a more integrated approach to device fabrication, where the same ALD layer can serve as graphene protection, support, encapsulation and functional device layer
We have demonstrated the concept of using ALD oxide films for graphene interfacing and post-growth encapsulation and as a protective and supporting layer for chemical vapour deposition (CVD) graphene transfer and integrated FET fabrication
Back-gated graphene FET devices transferred with ALD alumina show significantly reduced charge trap and residual carrier densities
Summary
A Cabrero-Vilatela et al majority of emerging applications the graphene has to be released from this parent growth substrate and transferred into the device stack. To achieve such graphene transfer cleanly and without damage, in order that the unique properties of graphene are preserved, has become a critical challenge [11,12,13,14,15]. Due to its scalability and atomic layer growth control, ALD is suited to be used in conjunction with CVD graphene, and initial progress has been made in exploring the ALD parameter space to achieve conformal nucleation of ultrathin oxides on graphene and to improve rational 2D/non-2D material integration [41,42,43,44]
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