Abstract
The excellent resistive switching characteristics of atomic-layer-deposited HfLaO-based devices are investigated for nonvolatile memory applications. With the help of nonlattice oxygen ions which is designed to incorporate into the film by decomposition of H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> during process, highly uniform and reproducible resistance switching cycles could be observed with the resistive ratio as high as 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> for more than 10 000 cycles. In addition, the fast operation speed (10 ns) has been demonstrated. Conduction of the off state is dominated by the space-charge-limited hopping, while the ohmic behavior dictates the on state, which suggests a filamentary conduction mechanism. Moreover, the estimated readout characteristics under different read voltages from 0.3 to 1 V were sufficiently stable to fulfill the requirement for memory application. Considering the excellent memory switching behavior, a resistance switch device composed of a promising high- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> HfLaO dielectric film is a possible candidate to be integrated into future memory processes.
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