Atomic-layer-deposited H:MoOx function layer as efficient hole selective passivating contact in silicon solar cells

Abstract

Transition metal oxides deposited by Atomic Layer Deposition (ALD) exhibit the potential to allow for doping modification by different reaction precursors and annealing during the deposition process. In this work, we demonstrate ALD-deposited hydrogenated molybdenum oxide (H:MoOx) as an efficient hole selective passivating contact for p-type crystalline silicon solar cell. The precursor and deposition temperature has a significant impact on the H:MoOx thin films, leading to the variation in degree of hydrogenation and work function. Employing H:MoOx thin films as hole selective passivating contacts for c-Si(p), a low contact resistivity of 72.6 mΩ cm2 and a high iVoc of 624 mV can be realized. Finally, c-Si(p) solar cell with H:MoOx thin film as hole selective passivating contact showed an increased power conversion efficiency from 15.48% (without H:MoOx) to 17.23% (with H:MoOx). The results show an effective stage to employ ALD-deposited high work function hydrogenated transition metal oxide as hole selective passivating contact.