Atomic Layer Control in Cubic SiC Growth Utilizing Surface Superstructure in Gas Source MBE

Abstract

Low temperature epitaxial growth of cubic SiC has been achieved by gas source MBE(molecular beam epitaxy) which includes introducing source gases of Si and C, alternately. Cubic SiC (001) heteroepitaxially grown on Si by CVD was used as a substrate. The RHEED pattern changed from (1x1) to (3x2), when Si2H6 was introduced. This superstructure is kept after the Si2H6 supply is stopped, and it returns to the initial (1x1) pattern when C2H2 begins to flow. By alternating the supply, the transitions between (1x1) and (3x2) could continue for more than 1000 cycles. Under optimum conditions, single crystalline cubic SiC was obtained with a smooth and mirror-like surface. The growth rate, defined as the number of SiC molecular layers per one cycle, was 2.3-3.2.KeywordsSubstrate TemperatureMolecular Beam EpitaxySticking CoefficientRHEED PatternCrystalline Silicon CarbideThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.