Abstract
The effects of atomic hydrogen (AH) exposure on epi-ready, low-index surface orientations of GaAs at 400 °C have been studied using reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). The effective removal of the native oxide by AH from GaAs(0 0 1), (1 1 0) and (1 1 1)A substrates was indicated by the gradual appearance of sharp, intense RHEED patterns, typical of those observed normally for clean, flat surfaces. STM images provided direct evidence for the high quality of the as-cleaned surfaces, with further improvements in surface morphology observed after annealing under an As 2 flux and subsequent buffer growth, as evidenced by significant reductions in surface roughness and step density. Our results show that AH treatment is an effective method for preparing atomically smooth GaAs surfaces for use in an epitaxial growth environment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
