Abstract
The topographic characteristics of cleaved surfaces in Ge/Si structures containing buried layers of GeSi nanoislands were investigated by atomic-force microscopy in atmospheric air. The relaxation of elastic stresses in islands and in adjacent regions of the Si matrix on the free cleaved surface was shown to result in local topographic features on the cleavages of the structures. It was found that the islands can appear on the cleaved surface in the form of two types of topographic features: as hillocks, if the cleavage plane directly crosses an island elastically compressed in the Si matrix, or as a pit, if the cleavage plane crosses the Si-matrix region adjacent to the island and subjected to tensile stress. The investigations performed showed the potential of the new method of studying buried nanoislands for revealing their presence; estimating their sizes, size distribution, and interaction effects in multilayer structures; and also for revealing strains associated with them.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
