Abstract
Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Au films on SiO2using the atomic force microscopy technique. By the analyses of the dependence of the roughness, σ, of the surface roughness power,P(f), and of the correlation length,ξ, on the film thickness,h, the roughness exponent,α = 0.9 ± 0.1, the growth exponent,β = 0.3 ± 0.1, and the dynamic scaling exponent,z = 3.0 ± 0.1 were independently obtained. These values suggest that the sputtering deposition of Au on SiO2at room temperature belongs to a conservative growth process in which the Au grain boundary diffusion plays a dominant role.
Highlights
Thin films having 0.1 nm thickness play important roles in various fields of modern day science and technology [1, 2]
We report an atomic force microscopy (AFM) study of the thickness dependence of r and n for a nanostructured thin Au film deposited by sputtering at room temperature on a SiO2 substrate
We suggest that the growth of Au film on SiO2 at room temperature is consistent with a conservative growth process
Summary
Thin films having 0.1 nm thickness play important roles in various fields of modern day science and technology [1, 2].
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
