Abstract
Atomic force microscopy was used to measure the “roughness” exponents of the rough porous silicon surfaces formed by electrochemical anodization. It was found that the porous Si surfaces have a self-affine fractal structure characterized by roughness exponents α=0.53–0.64, fractal dimensions D=2.36–2.47 and a growth exponent β=0.24 ±0.02.
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