Abstract
ABSTRACTThe evolution of microstructure of thin oxide films during growth has been quantitatively analysed by atomic force microscopy (AFM). The oxide films were formed in pure oxygen atmosphere at temperatures ranging from 873 to 1173 K on polycrystalline nickel substrates. The substrates were both pure and superficially modified by nanometer-sized dispersions of CeO2. The incorporation of reactive element into the oxide inhibits the growth kinetics and affects the microscopic surface morphology. The extent of this effect depends essentially on the substrate surface microstructure prior to modification and the size of CeO2 particles. A correlation was found between the surface topography and the reduction of oxide growth rate caused by the reactive element.
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