Atomic force microscopy studies of formation of black silicon by reactive ion etching

Abstract

Black silicon BSi a surface modification of silicon can be fabricated by various methods such as Electrochemical Etching Metal Assisted Chemical Etching Laser Method etc The fabrication of BSi by Reactive Ion Etching RIE under various pressures and for different etch durations is presented in this study The influence of pressure and etch time on the surface roughness of the resulting BSi is investigated and compared with the literature