Abstract
Samples of InP(100) n-doped with S atoms to 4×1018 cm-3, were bombarded with 0.5 keV argon ions and with krypton ions of energy 0.5 and 5 keV at various angles to the sample normal. The ion dose density for 0.5 keV Ar+ and 0.5 keV Kr+ bombardment was 5×1016 ions cm-2, whereas for 5 keV Kr+ it was 2×1016 ions cm-2. The ion current density was set to a low value of 5×1013 ions cm-2 s-1 to minimize the sample heating. The resulting topography development was investigated with an atomic force microscope. The surface roughness was quantified and analysed as a function of the angle of ion bombardment. Two- and three-dimensional images showing various types of topography and sputter cone size (height and width) are also presented. Close resemblance between the dependency of roughness and sputter rate on angle of ion incidence suggests a correlation between the two.
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