Abstract
Atomic force microscopy (AFM) lithography has been investigated in La0.8Ba0.2MnO3 (LBMO) films. Unexpectedly, AFM lithography can be performed in LBMO film not only under a positive sample bias, but also under a negative sample bias. Under a positive sample bias voltage, grooves can be obtained directly with poor controllability and reproducibility. However, under a negative sample bias, controllable nanosized patterns were obtained with excellent reproducibility and a high etching selectivity. It is expected that various nanodevices will be fabricated by AFM lithography and etching techniques with perovskite manganites.
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