Abstract
ABSTRACTAnodization of Ti by high electric fields at the tip of a scanned probe can be used to produce nanoscale features consisting of oxides of Ti. In this manner, Ti can be used as a sacrificial resist for nanoscale lithography by exploiting the etching selectivity differences between Ti and anodized Ti. The anodization was accomplished with an atomic force microscope using Ticoated silicon nitride cantilevers. The anodizing bias voltage is applied to the tip and is independent of the feedback, unlike the scanning tunneling microscope. With this setup we were able to fabricate sub-40 nm lines by direct anodization of Ti. It is also shown that once tip and sample are brought into hard contact, subsequent bending of the cantilever has little effect on the linewidth or thickness of the anodized material.
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