Atomic Diffusion Mechanism in BF2+ Implanted and Annealed n-Fz Si junction using Analytical Approach: Comparison with 2-D TCAD Process Simulation Result

Abstract

Ion implantation controls the diffusion of the dopants inside the n-Fz Si bulk of the p+n Si microstrip detector. In order to understand about the diffusion mechanism of BF2 + molecules/dopants into the n-Fz Si bulk of Double Sided Silicon Strip Detector (back side) for the R3B Silicon Tracker, it is essential to know the precise information about the microscopic defect introduces inside the Si lattice of the detector for the next phase upgrade of the R3B experiment. The purpose of this paper is to present the atomic transport and electrical activation behavior of implanted BF2+ molecules/dopants at an energy of 80 KeV and a dose of 1015 ion/cm2 into the n-Fz Double Sided Silicon Strip Detector for the R3B Silicon Tracker after annealing at 400 °C - 1350 °C.The result shows the amorphous-crystalline interface position and recrystallization temperature using the results revealed from the 2-D TCAD process simulation of the Si microstrip detector.