Abstract
Abstract This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and In-N bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting In-N bonds formation, while the thermal annealing seems to affect the N-related defects density in the layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
