Abstract
Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (nWC=1.02 and nZr=1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCRWC=3.03 and OCRZr=1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.
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