Abstract
The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 1017 to ~1020 at cm–3 and of δ doping to the surface concentration (0.3–5) × 1013 at cm–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.
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