Abstract
Strain effects and electronic parameters of delta-modulation-doped Al x Ga 1− x As/In y Ga 1− y As/Al x Ga 1− x As step quantum wells were investigated by high-resolution transmission electron microscopy (HRTEM) and Shubnikov-de Haas (S-dH) measurements. An atomic crystal structure for the quantum wells was described based on the HRTEM results, and the carrier density and the effective mass of the two-dimensional electron gas (2DEG) occupied in the In y Ga 1− y As quantum wells were determined from the S-dH data. The electronic parameters in delta-modulation-doped Al x Ga 1− x As/In y Ga 1− y As/Al x Ga 1− x As step quantum wells were compared with those in GaAs/In y Ga 1− y As/Al x Ga 1− x As step quantum well. The electronic subband structures in the quantum wells were calculated by a self-consistent method. The present results can help to improve the understanding of the microstructural and electronic properties in delta-modulation-doped Al x Ga 1− x As/In y Ga 1− y As/Al x Ga 1− x As step quantum wells.
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