Abstract

AbstractAs interest has increased in the interaction between low-temperature plasmas and materials, the role of modeling and simulation of processing plasmas has become important in understanding the effects of charged particles and radicals in plasma applications. Also, in order to understand the behavior and properties of chemically active plasma, atomic and molecular processes have become a rapidly growing area of scientific endeavor that holds great promise for practical applications for industrial fields. Thus, in this chapter, we briefly introduce the applications of low-temperature plasma, especially plasma processing in semiconductor manufacturing, and what kind of data needed in plasma processing, how to develop the reaction mechanisms, and how it applied to the simulation. 0D global modeling of ICP plasma-etching equipment and development of a two-dimensional fluid simulator for a SiH4discharge are given as an example. In addition, we introduce the line-intensity ratio method for plasma diagnostic, it can be a good example how atomic and molecular data can be used plasma diagnostics.KeywordsElectron TemperatureRate CoefficientLine RatioBias PowerAnomalous Skin EffectThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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