Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma

Abstract

The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO2, the more so the longer the treatment time. The atomic structure of the SiOx < 2 films obtained in this way is described by the random bonding model. The presence of oxygen vacancies in the plasma-treated films is confirmed by comparing the experimental valence band photoelectron spectra and those calculated from first principles, which allows the parameter x to be estimated. We show that thermal silicon oxide films treated in hydrogen plasma can be successfully used as a storage medium for a nonvolatile resistive memory cell.