Abstract
The observation of reaction outcomes at the bulk scale provides an average view of chemical processes, obscuring potentially significant differences in the behavior of matter at the atom scale. Through a series of atom-resolved scanning tunneling microscopy experiments, the inhomogeneous reactivity of silicon surface dangling bond states is revealed. The differences in reactivity provide evidence for the coexistence of neutral and negative surface states on these surfaces. It is shown that reactivity can be modulated through the density of surface states and by the bulk dopant level. These findings demonstrate that site-specific surface reactivity at the atom scale can be modulated by nonlocal charge allocation and provide opportunities for controlling chemistry at this scale.
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